Studies of defects in photonic materials
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Abstract
Indium tin oxide (ITO) films have high optical transmission and infrared reflectance, good electrical conductivity, excellent substrate adherence, hardness and chemical inertness. These properties lead to many applications in the area of photonics. Bombardment of ITO films with 1 MeV protons has been carried out resulting in an observed darkening. Insights into the darkening mechanism that consists of three growth stages as a function of fluence are provided by a study of the optical absorption and X-ray lattice parameter. A new interpretation is provided for the darkening mechanism in terms of the production of defect clusters resulting from the atomic displacements during implantation. Csl crystals are very effective scintillator materials for particle detectors in high energy physics. Although radiation hard, radiation damage produces colour centres in Csl that reduce light emission and can negatively affect the luminescent centres. Using a combination of Raman and optical absorption spectroscopy applied to Csl crystals bombarded with 1 MeV protons at 300 K, the resulting defects are shown to be F-type centres and interstitial V-centres having the I3- structure and being responsible for absorption bands at 2.7 and 3.4 eV. Isochronal and isothermal annealing experiments show a mutual decay of the F and V-centres. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Studies of defects in photonic materials</title><author><name sortKey="Amolo, G O" uniqKey="Amolo G">G. O. Amolo</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials Physics Research Institute, School of Physics, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><placeName><settlement type="city">Johannesburg</settlement><region type="region" nuts="2">Gauteng</region></placeName><orgName type="university">Université du Witwatersrand</orgName></affiliation></author><author><name sortKey="Comins, J D" uniqKey="Comins J">J. D. Comins</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials Physics Research Institute, School of Physics, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><placeName><settlement type="city">Johannesburg</settlement><region type="region" nuts="2">Gauteng</region></placeName><orgName type="university">Université du Witwatersrand</orgName></affiliation><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Raman and Luminescence Laboratory, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><placeName><settlement type="city">Johannesburg</settlement><region type="region" nuts="2">Gauteng</region></placeName><orgName type="university">Université du Witwatersrand</orgName></affiliation></author><author><name sortKey="Erasmus, R M" uniqKey="Erasmus R">R. M. Erasmus</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials Physics Research Institute, School of Physics, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><placeName><settlement type="city">Johannesburg</settlement><region type="region" nuts="2">Gauteng</region></placeName><orgName type="university">Université du Witwatersrand</orgName></affiliation><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Raman and Luminescence Laboratory, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><placeName><settlement type="city">Johannesburg</settlement><region type="region" nuts="2">Gauteng</region></placeName><orgName type="university">Université du Witwatersrand</orgName></affiliation></author><author><name sortKey="Derry, T E" uniqKey="Derry T">T. E. Derry</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Ion Implantation and Surface Physics Research Programme, School of Physics, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>4 aut.</sZ></inist:fA14><country>Afrique du Sud</country><placeName><settlement type="city">Johannesburg</settlement><region type="region" nuts="2">Gauteng</region></placeName><orgName type="university">Université du Witwatersrand</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0057974</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0057974 INIST</idno><idno type="RBID">Pascal:10-0057974</idno><idno type="wicri:Area/Main/Corpus">004B03</idno><idno type="wicri:Area/Main/Repository">004B21</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Annealing</term><term>Cesium iodide</term><term>Color centers</term><term>Darkening</term><term>Defect formation</term><term>Fluence</term><term>Irradiation defect</term><term>Proton irradiation</term><term>Radiation effects</term><term>Raman spectra</term><term>Scintillator</term><term>Tin Indium Oxides Mixed</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Défaut irradiation</term><term>Spectre absorption</term><term>Irradiation proton</term><term>Spectre Raman</term><term>Recuit</term><term>Obscurcissement</term><term>Fluence</term><term>Formation défaut</term><term>Etain Indium Oxyde Mixte</term><term>Effet rayonnement</term><term>Centre coloré</term><term>Scintillateur</term><term>Iodure de césium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) films have high optical transmission and infrared reflectance, good electrical conductivity, excellent substrate adherence, hardness and chemical inertness. These properties lead to many applications in the area of photonics. Bombardment of ITO films with 1 MeV protons has been carried out resulting in an observed darkening. Insights into the darkening mechanism that consists of three growth stages as a function of fluence are provided by a study of the optical absorption and X-ray lattice parameter. A new interpretation is provided for the darkening mechanism in terms of the production of defect clusters resulting from the atomic displacements during implantation. Csl crystals are very effective scintillator materials for particle detectors in high energy physics. Although radiation hard, radiation damage produces colour centres in Csl that reduce light emission and can negatively affect the luminescent centres. Using a combination of Raman and optical absorption spectroscopy applied to Csl crystals bombarded with 1 MeV protons at 300 K, the resulting defects are shown to be F-type centres and interstitial V-centres having the I<sub>3</sub><sup>-</sup> structure and being responsible for absorption bands at 2.7 and 3.4 eV. Isochronal and isothermal annealing experiments show a mutual decay of the F and V-centres. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>404</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Studies of defects in photonic materials</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the Third South African Conference on Photonic Materials: SACPM 2009: held in Mabula Game Lodge, South Africa 23-27 March 2009</s1></fA09><fA11 i1="01" i2="1"><s1>AMOLO (G. O.)</s1></fA11><fA11 i1="02" i2="1"><s1>COMINS (J. D.)</s1></fA11><fA11 i1="03" i2="1"><s1>ERASMUS (R. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>DERRY (T. E.)</s1></fA11><fA12 i1="01" i2="1"><s1>VENTER (André)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BOTHA (Reinhardt)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>AURET (Danie)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Materials Physics Research Institute, School of Physics, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Raman and Luminescence Laboratory, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Ion Implantation and Surface Physics Research Programme, School of Physics, University of the Witwatersrand</s1><s2>Johannesburg, Wits 2050</s2><s3>ZAF</s3><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Nelson Mandela Metropolitan University</s1><s2>Port Elizabeth</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA15 i1="02"><s1>University of Pretoria</s1><s2>Pretoria</s2><s3>ZAF</s3><sZ>3 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>University of Pretoria</s1><s2>Pretoria</s2><s3>ZAF</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Nelson Mandela Metropolitan University</s1><s2>Port Elizabeth</s2><s3>ZAF</s3><s9>org-cong.</s9></fA18><fA18 i1="03" i2="1"><s1>South African Institute of Physics. Condensed Matter Physics and Materials Specialist group</s1><s3>ZAF</s3><s9>org-cong.</s9></fA18><fA20><s1>4370-4375</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000171439680080</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0057974</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium tin oxide (ITO) films have high optical transmission and infrared reflectance, good electrical conductivity, excellent substrate adherence, hardness and chemical inertness. These properties lead to many applications in the area of photonics. Bombardment of ITO films with 1 MeV protons has been carried out resulting in an observed darkening. Insights into the darkening mechanism that consists of three growth stages as a function of fluence are provided by a study of the optical absorption and X-ray lattice parameter. A new interpretation is provided for the darkening mechanism in terms of the production of defect clusters resulting from the atomic displacements during implantation. Csl crystals are very effective scintillator materials for particle detectors in high energy physics. Although radiation hard, radiation damage produces colour centres in Csl that reduce light emission and can negatively affect the luminescent centres. Using a combination of Raman and optical absorption spectroscopy applied to Csl crystals bombarded with 1 MeV protons at 300 K, the resulting defects are shown to be F-type centres and interstitial V-centres having the I<sub>3</sub><sup>-</sup> structure and being responsible for absorption bands at 2.7 and 3.4 eV. Isochronal and isothermal annealing experiments show a mutual decay of the F and V-centres. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A40E</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A80J</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Défaut irradiation</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Irradiation defect</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Defecto irradiación</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Irradiation proton</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Proton irradiation</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Irradiación protón</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectre Raman</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Raman spectra</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Recuit</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Annealing</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Obscurcissement</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Darkening</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Obscurecimiento</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Fluence</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Fluence</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Fluencia</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Formation défaut</s0><s5>11</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Defect formation</s0><s5>11</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Formación defecto</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Etain Indium Oxyde Mixte</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Tin Indium Oxides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Radiation effects</s0><s5>13</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Centre coloré</s0><s5>14</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Color centers</s0><s5>14</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Scintillateur</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Scintillator</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Centelleador</s0><s5>17</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Iodure de césium</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Cesium iodide</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Cesio ioduro</s0><s5>18</s5></fC03><fN21><s1>039</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Conference on Photonic Materials</s1><s2>3</s2><s3>Bela Bela, Limpopo Province ZAF</s3><s4>2009-03-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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